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DARPA Wants to Cultivate the ­ltimate Transistor of the Future

By Network World

March 22, 2017

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The U.S. Defense Advanced Research Projects Agency (DARPA) this month will present the Dynamic Range-enhanced Electronics and Materials (DREaM) program, which aims to develop a new generation of radiofrequency (RF) and millimeter-wave transistors to address the power and range requirements for wireless devices in a range of applications.

DARPA program manager Dan Green says DREaM transistors will transmit and receive the large and complex RF signals of the future, and they will do so in smaller packages while consuming minimal power.

DREaM researchers will try to solve the performance tradeoffs between four key characteristics of RF transistors, including signal power, power efficiency, the range of frequencies in which the transistors work, and the measure of the fidelity at which a receiver can amplify signals.

In addition, DREaM will focus on developing new materials that can handle more electrical charge and voltage without degrading.

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