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Resistive Memory Components the Computer Industry Can't Resist

By YaleNews

October 25, 2017

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Researchers at Yale University, the National University of Singapore, and the Indian Association for the Cultivation of Sciences in India have developed new memristor devices that last 1 trillion cycles, an achievement they say far surpasses the endurance of commercial flash memories for computing.

"The molecular-level understanding of these devices that we have helped generate is unprecedented in a memory device, and this allows us to create design principles for the next generation of devices," says Yale professor Victor Batista.

He notes the devices have potential in neuromorphic computing, which attempts to simulate the architecture of the human brain and involves systems with electronic analog circuitry that mimics neural structures.

Although this new discovery could prove to be extremely useful, the team says more research must be done to better understand the information-storing properties of the new memristors.

"These molecules are like electron sponges and what we still don't understand is how the electrical charges are being balanced," Batista says.

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