Researchers at the University of Minnesota (UM) and Pennsylvania State University say they have demonstrated the existence of a new type of magnetoresistance involving topological insulators that could potentially improve computing and computer storage.
"Our discovery is one missing piece of the puzzle to improve the future of low-power computing and memory for the semiconductor industry, including brain-like computing and chips for robots and 3D (three-dimensional) magnetic memory," says UM professor Jian-Ping Wang.
He says the magnetoresistance was discovered in topological insulator-ferromagnet bilayers, and its presence validated the supposition that adoption of topological insulators doubles the magnetoresistance performance at 150 degrees Kelvin, compared to heavy metals.
The researchers note from an application viewpoint, this discovery provides a key missing ingredient for the creation of a proposed 3D and cross-bar-type computing and memory device that involves topological insulators by adding the previously missing or very inconvenient read functionality.
From University of Minnesota News
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