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NIST, Collaborators Develop Sensitive Way of Detecting Transistor Defects

By NIST News

October 14, 2021

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Researchers at the U.S. National Institute of Standards and Technology and Pennsylvania State University have developed a sensitive new model for detecting and counting transistor defects.

The researchers placed a transistor into bipolar amplification mode by applying a voltage to the source and gate, to produce decreasing concentrations of electrons across the channel and rendering the source-to-drain current sensitive to interface defects.

Monitoring current at the drain while varying gate voltage enabled an accurate count of defects from the drop in current.

Markus Kuhn at X-ray technology developer Rigaku said, "This technique can provide unique insight into the presence of these destabilizing transistor defects and a path to mechanistic understanding of their formation. With such knowledge, there would be greater opportunity to control and reduce them in order to improve transistor performance and reliability."

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