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Imec Ramps Resistive Ram Research

By EE Times

June 14, 2010



Increasingly diverse application cases that influence specifications and device requirements will prevent resistive RAMs from leading to a single "universal" memory, predict's IMEC's program director for CMOS technology Laith Altimime.

IMEC is conducting research on materials for use in RRAMs. The IMEC research team is investigating metal oxides for feasibility and rewritability as a replacement for NAND flash, and metal-chalcogenides mixtures of a metal with germanium, antimony, and tellurium as a replacement for DRAM. Altimime cites nickel-oxide as the leading material among metal oxides, and says switching copper is a possible ion source for chalcogenide.

IMEC is working on a series of fundamental cross-bar studies at 50 nm to gain a better understanding of RRAM materials. One-transistor, one-resistor memory cell studies, which would help lead the way to memory arrays made using the incoming extreme ultraviolet lithography, should be ready by the second half of the year. In early 2011, IMEC should begin making arrays at 10 nm minimum dimensions.

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